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Intense terahertz excitation of semiconductors
This work presents the first comprehensive treatment of high-power terahertz applications to semiconductors and low-dimensional semiconductor structures. Terahertz properties of semiconductors are in the centre of scientific activities because of the need of high-speed electronics.
| Autores principales: | , |
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| Lenguaje: | eng |
| Publicado: |
Oxford University Press
2006
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1093/acprof:oso/9780198528302.001.0001 http://cds.cern.ch/record/1447844 |
| Sumario: | This work presents the first comprehensive treatment of high-power terahertz applications to semiconductors and low-dimensional semiconductor structures. Terahertz properties of semiconductors are in the centre of scientific activities because of the need of high-speed electronics. |
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