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Generation current temperature scaling
The document consists of two RD50 Technical Notes devoted to the temperature scaling of the current generated in Si bulk. The first one (of 9.5.2011) describes the basics of the phenomenon following from the semiconductor physics and recommends the I(T) parameterisation. The second one (of 12.7.2012...
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2013
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| Acceso en línea: | http://cds.cern.ch/record/1511886 |