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Amphoteric arsenic in GaN
We have determined the lattice location of implanted arsenic in GaN by means of conversion electron emission channeling from radioactive $^{73}$As. We give direct evidence that As is an amphoteric impurity, thus settling the long-standing question as to whether it prefers cation or anion sites in Ga...
| Autores principales: | , , , , |
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| Lenguaje: | eng |
| Publicado: |
2007
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1063/1.2736299 http://cds.cern.ch/record/1522407 |