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Lattice location study of implanted In in Ge
We report on emission channeling experiments to determine the lattice location and the thermal stability of implanted $^{111}$In atoms in Ge. The majority of the In atoms was found on the substitutional site, which is a thermally stable site at least up to 500 °C. We also found strong indication tha...
| Autores principales: | , , , , |
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| Lenguaje: | eng |
| Publicado: |
2009
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1063/1.3110104 http://cds.cern.ch/record/1522416 |