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Emission channeling studies of Indium Phosphide at low temperatures at CERN-ISOLDE
$^{111}$In radioactive atoms were implanted into a single crystal of InP. After annealing for lattice recovery of implantation defects, the lattice site location of $^{111}$In/$^{111}$Cd was studied with the emission channeling technique, from room temperature ( 300K) down to 50K at CERN-ISOLDE. Thi...
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| Lenguaje: | eng |
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2013
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| Acceso en línea: | http://cds.cern.ch/record/1522458 |