Emission channeling studies of Indium Phosphide at low temperatures at CERN-ISOLDE

$^{111}$In radioactive atoms were implanted into a single crystal of InP. After annealing for lattice recovery of implantation defects, the lattice site location of $^{111}$In/$^{111}$Cd was studied with the emission channeling technique, from room temperature ( 300K) down to 50K at CERN-ISOLDE. This work aims to test a recently developed cooling station for emission channeling experiments. InP is a material with a relatively low Debye temperature, where significant changes of atomic vibrations are expected with temperature, thus providing an ideal test ground of the effects, which can be expected to influence the data, i.e., de-channeling from lattice vibration and changes of the root mean square displacement (r.m.s.) of the atomic position of the probe atom. In the future we intend to apply these studies to monitor individual impurities or lattice constituents, with temperature, upon phase transitions as well as studying lattice sites of dopants implanted at low temperature.