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Emission channeling studies of Indium Phosphide at low temperatures at CERN-ISOLDE

$^{111}$In radioactive atoms were implanted into a single crystal of InP. After annealing for lattice recovery of implantation defects, the lattice site location of $^{111}$In/$^{111}$Cd was studied with the emission channeling technique, from room temperature ( 300K) down to 50K at CERN-ISOLDE. Thi...

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Detalles Bibliográficos
Autor principal: Amorim, Lígia Marina
Lenguaje:eng
Publicado: 2013
Materias:
Acceso en línea:http://cds.cern.ch/record/1522458

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