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Ion Implantation in Ge: Structural and electrical investigation of the induced lattice damage & Study of the lattice location of implanted impurities
The past two decades, germanium has drawn international attention as one of the most promising materials to replace silicon in semiconductor applications. Due to important advantages with respect to Si, such as the increased electron and hole mobility, Ge is well on its way to become an important ma...
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| Lenguaje: | eng |
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2013
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| Acceso en línea: | http://cds.cern.ch/record/1522462 |