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Diluted manganese on the bond-centered site in germanium
The functional properties of Mn-doped Ge depend to large extent on the lattice location of the Mn impurities. Here, we present a lattice location study of implanted diluted Mn by means of electron emission channeling. Surprisingly, in addition to the expected substitutional lattice position, a large...
| Autores principales: | , , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2010
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| Materias: | |
| Acceso en línea: | http://cds.cern.ch/record/1523749 |