Diluted manganese on the bond-centered site in germanium

The functional properties of Mn-doped Ge depend to large extent on the lattice location of the Mn impurities. Here, we present a lattice location study of implanted diluted Mn by means of electron emission channeling. Surprisingly, in addition to the expected substitutional lattice position, a large...

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Detalles Bibliográficos
Autores principales: Decoster, S, Vantomme, A, Cottenier, S, Wahl, U, Correia, JG, Pereira, LMC, Lacasta, C, Da Silva, MR
Lenguaje:eng
Publicado: 2010
Materias:
Condensed Matter
Acceso en línea:http://cds.cern.ch/record/1523749
Descripción
Sumario:The functional properties of Mn-doped Ge depend to large extent on the lattice location of the Mn impurities. Here, we present a lattice location study of implanted diluted Mn by means of electron emission channeling. Surprisingly, in addition to the expected substitutional lattice position, a large fraction of the Mn impurities occupies the bond-centered site. Corroborated by ab initio calculations, the bond-centered Mn is related to Mn-vacancy complexes. These unexpected results call for a reassessment of the theoretical studies on the electrical and magnetic behavior of Mn-doped Ge, hereby including the possible role of Mn-vacancy complexes.

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