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Diluted manganese on the bond-centered site in germanium

The functional properties of Mn-doped Ge depend to large extent on the lattice location of the Mn impurities. Here, we present a lattice location study of implanted diluted Mn by means of electron emission channeling. Surprisingly, in addition to the expected substitutional lattice position, a large...

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Detalles Bibliográficos
Autores principales: Decoster, S, Vantomme, A, Cottenier, S, Wahl, U, Correia, JG, Pereira, LMC, Lacasta, C, Da Silva, MR
Lenguaje:eng
Publicado: 2010
Materias:
Acceso en línea:http://cds.cern.ch/record/1523749
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author Decoster, S
Vantomme, A
Cottenier, S
Wahl, U
Correia, JG
Pereira, LMC
Lacasta, C
Da Silva, MR
author_facet Decoster, S
Vantomme, A
Cottenier, S
Wahl, U
Correia, JG
Pereira, LMC
Lacasta, C
Da Silva, MR
author_sort Decoster, S
collection CERN
description The functional properties of Mn-doped Ge depend to large extent on the lattice location of the Mn impurities. Here, we present a lattice location study of implanted diluted Mn by means of electron emission channeling. Surprisingly, in addition to the expected substitutional lattice position, a large fraction of the Mn impurities occupies the bond-centered site. Corroborated by ab initio calculations, the bond-centered Mn is related to Mn-vacancy complexes. These unexpected results call for a reassessment of the theoretical studies on the electrical and magnetic behavior of Mn-doped Ge, hereby including the possible role of Mn-vacancy complexes.
id cern-1523749
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2010
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spelling cern-15237492019-09-30T06:29:59Zhttp://cds.cern.ch/record/1523749engDecoster, SVantomme, ACottenier, SWahl, UCorreia, JGPereira, LMCLacasta, CDa Silva, MRDiluted manganese on the bond-centered site in germaniumCondensed MatterThe functional properties of Mn-doped Ge depend to large extent on the lattice location of the Mn impurities. Here, we present a lattice location study of implanted diluted Mn by means of electron emission channeling. Surprisingly, in addition to the expected substitutional lattice position, a large fraction of the Mn impurities occupies the bond-centered site. Corroborated by ab initio calculations, the bond-centered Mn is related to Mn-vacancy complexes. These unexpected results call for a reassessment of the theoretical studies on the electrical and magnetic behavior of Mn-doped Ge, hereby including the possible role of Mn-vacancy complexes.CERN-OPEN-2013-008oai:cds.cern.ch:15237492010-10-15
spellingShingle Condensed Matter
Decoster, S
Vantomme, A
Cottenier, S
Wahl, U
Correia, JG
Pereira, LMC
Lacasta, C
Da Silva, MR
Diluted manganese on the bond-centered site in germanium
title Diluted manganese on the bond-centered site in germanium
title_full Diluted manganese on the bond-centered site in germanium
title_fullStr Diluted manganese on the bond-centered site in germanium
title_full_unstemmed Diluted manganese on the bond-centered site in germanium
title_short Diluted manganese on the bond-centered site in germanium
title_sort diluted manganese on the bond-centered site in germanium
topic Condensed Matter
url http://cds.cern.ch/record/1523749
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AT correiajg dilutedmanganeseonthebondcenteredsiteingermanium
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