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Stability and diffusion of interstitital and substitutional Mn in GaAs of different doping types
We report on the lattice location of Mn impurities (< 0.05%) in undoped (semi-insulating) and heavily $n$-type doped GaAs, by means of $\beta^{-}$-emission channeling from the decay of $^{56}$Mn produced at ISOLDE/CERN. In addition to the majority substituting for Ga, we locate up to 30% of the M...
| Autores principales: | , , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2011
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| Materias: | |
| Acceso en línea: | http://cds.cern.ch/record/1524193 |