Stability and diffusion of interstitital and substitutional Mn in GaAs of different doping types

We report on the lattice location of Mn impurities (< 0.05%) in undoped (semi-insulating) and heavily $n$-type doped GaAs, by means of $\beta^{-}$-emission channeling from the decay of $^{56}$Mn produced at ISOLDE/CERN. In addition to the majority substituting for Ga, we locate up to 30% of the M...

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Detalles Bibliográficos
Autores principales: Pereira, LMC, Wahl, U, Decoster, S, Correia, JG, Amorim, LM, da Silva, MR, Araújo, JP, Vantomme, A
Lenguaje:eng
Publicado: 2011
Materias:
Condensed Matter
Acceso en línea:http://cds.cern.ch/record/1524193

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