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Charge Losses in Silicon Sensors and Electric-Field Studies at the Si-SiO$_2$ Interface
Electric fields and charge losses in silicon sensors before and after irradiation with x-rays, protons, neutrons or mixed irradiation are studied in charge-collection measurements. Electron-hole pairs ($eh$ pairs) are generated at different positions in the sensor using sub-ns pulsed laser light of...
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| Lenguaje: | eng |
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2013
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| Acceso en línea: | http://cds.cern.ch/record/1604839 |