Radiation and magnetic field effects on new semiconductor power devices for HL-LHC experiments

The radiation hardness of commercial Silicon Carbide and Gallium Nitride power MOSFETs is presented in this paper, for Total Ionizing Dose effects and Single Event Effects, under γ, neutrons, protons and heavy ions. Similar tests are discussed for commercial DC-DC converters, also tested in operatio...

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Detalles Bibliográficos
Autores principales: Fiore, S., Abbate, C., Baccaro, S., Busatto, G., Citterio, M., Iannuzzo, F., Lanza, A., Latorre, S., Lazzaroni, M., Sanseverino, A., Velardi, F.
Lenguaje:eng
Publicado: 2013
Materias:
hep-ex
Particle Physics - Experiment
physics.ins-det
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1142/9789814603164_0106
http://cds.cern.ch/record/1606652

Internet

https://dx.doi.org/10.1142/9789814603164_0106
http://cds.cern.ch/record/1606652

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