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Strain-engineered MOSFETs

Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Written from an engineering application standpoint, Strain-Engineered MOSFETs introduces promising strain techniques to fabricate...

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Detalles Bibliográficos
Autores principales: Maiti, CK, Maiti, T K
Lenguaje:eng
Publicado: CRC Press 2012
Materias:
Acceso en línea:http://cds.cern.ch/record/1616696
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author Maiti, CK
Maiti, T K
author_facet Maiti, CK
Maiti, T K
author_sort Maiti, CK
collection CERN
description Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Written from an engineering application standpoint, Strain-Engineered MOSFETs introduces promising strain techniques to fabricate strain-engineered MOSFETs and to methods to assess the applications of these techniques. The book provides the background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOSFETs at nanoscale. This book focuses on recent developments in st
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institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2012
publisher CRC Press
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spelling cern-16166962020-07-16T20:01:39Zhttp://cds.cern.ch/record/1616696engMaiti, CKMaiti, T KStrain-engineered MOSFETsEngineeringCurrently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Written from an engineering application standpoint, Strain-Engineered MOSFETs introduces promising strain techniques to fabricate strain-engineered MOSFETs and to methods to assess the applications of these techniques. The book provides the background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOSFETs at nanoscale. This book focuses on recent developments in stCRC Pressoai:cds.cern.ch:16166962012
spellingShingle Engineering
Maiti, CK
Maiti, T K
Strain-engineered MOSFETs
title Strain-engineered MOSFETs
title_full Strain-engineered MOSFETs
title_fullStr Strain-engineered MOSFETs
title_full_unstemmed Strain-engineered MOSFETs
title_short Strain-engineered MOSFETs
title_sort strain-engineered mosfets
topic Engineering
url http://cds.cern.ch/record/1616696
work_keys_str_mv AT maitick strainengineeredmosfets
AT maititk strainengineeredmosfets