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Strain-engineered MOSFETs
Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Written from an engineering application standpoint, Strain-Engineered MOSFETs introduces promising strain techniques to fabricate...
Autores principales: | , |
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Lenguaje: | eng |
Publicado: |
CRC Press
2012
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Materias: | |
Acceso en línea: | http://cds.cern.ch/record/1616696 |
_version_ | 1780932693150662656 |
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author | Maiti, CK Maiti, T K |
author_facet | Maiti, CK Maiti, T K |
author_sort | Maiti, CK |
collection | CERN |
description | Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Written from an engineering application standpoint, Strain-Engineered MOSFETs introduces promising strain techniques to fabricate strain-engineered MOSFETs and to methods to assess the applications of these techniques. The book provides the background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOSFETs at nanoscale. This book focuses on recent developments in st |
id | cern-1616696 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 2012 |
publisher | CRC Press |
record_format | invenio |
spelling | cern-16166962020-07-16T20:01:39Zhttp://cds.cern.ch/record/1616696engMaiti, CKMaiti, T KStrain-engineered MOSFETsEngineeringCurrently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Written from an engineering application standpoint, Strain-Engineered MOSFETs introduces promising strain techniques to fabricate strain-engineered MOSFETs and to methods to assess the applications of these techniques. The book provides the background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOSFETs at nanoscale. This book focuses on recent developments in stCRC Pressoai:cds.cern.ch:16166962012 |
spellingShingle | Engineering Maiti, CK Maiti, T K Strain-engineered MOSFETs |
title | Strain-engineered MOSFETs |
title_full | Strain-engineered MOSFETs |
title_fullStr | Strain-engineered MOSFETs |
title_full_unstemmed | Strain-engineered MOSFETs |
title_short | Strain-engineered MOSFETs |
title_sort | strain-engineered mosfets |
topic | Engineering |
url | http://cds.cern.ch/record/1616696 |
work_keys_str_mv | AT maitick strainengineeredmosfets AT maititk strainengineeredmosfets |