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Reliability of high mobility SiGe channel MOSFETs for future CMOS applications
Due to the ever increasing electric fields in scaled CMOS devices, reliability is becoming a showstopper for further scaled technology nodes. Although several groups have already demonstrated functional Si channel devices with aggressively scaled Equivalent Oxide Thickness (EOT) down to 5Å, a 10 yea...
| Autores principales: | , , |
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| Lenguaje: | eng |
| Publicado: |
Springer
2014
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1007/978-94-007-7663-0 http://cds.cern.ch/record/1627046 |