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Lattice site location of impurities in group III nitrides using emission channeling
The group III nitrides comprise the semiconducting materials InN, GaN, AlN and their ternary alloys. During the last decade, GaN has attracted widespread attention due to its large band gap and hardness. These properties, combined with the fact that its band gap can be adjusted by alloying it with I...
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| Lenguaje: | eng |
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2014
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| Acceso en línea: | http://cds.cern.ch/record/1640588 |