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Influence of n$^{+}$ and p$^{+}$ doping on the lattice sites of implanted Fe in Si
We report on the lattice location of implanted $^{59}$Fe in n$^{+}$ and p$^{+}$ type Si by means of emission channeling. We found clear evidence that the preferred lattice location of Fe changes with the doping of the material. While in n$^{+}$ type Si Fe prefers displaced bond-centered (BC) sites f...
| Autores principales: | , , , |
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| Lenguaje: | eng |
| Publicado: |
2013
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1063/1.4819210 http://cds.cern.ch/record/1640599 |