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Damage formation and recovery in Fe implanted 6H–SiC
Silicon carbide doped with magnetic ions such as Fe, Mn, Ni or Co could make this wide band gap semiconductor part of the diluted magnetic semiconductor family. In this study, we report the implantation of 6H-SiC single crystals with magnetic $^{56}$Fe$^{+}$ ions with an energy of 150 keV. The sampl...
| Autores principales: | , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2011
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/j.nimb.2011.10.072 http://cds.cern.ch/record/1640784 |