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Arsenic in ZnO and GaN: substitutional cation or anion sites?
We have determined the lattice location of ion implanted As in ZnO and GaN by means of conversion electron emission channeling from radioactive $^{73}$As. In contrast to what one might expect from its nature as a group V element, we find that As does not occupy substitutional O sites in ZnO but in i...
| Autores principales: | , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2007
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| Materias: | |
| Acceso en línea: | http://cds.cern.ch/record/1640785 |