Arsenic in ZnO and GaN: substitutional cation or anion sites?

We have determined the lattice location of ion implanted As in ZnO and GaN by means of conversion electron emission channeling from radioactive $^{73}$As. In contrast to what one might expect from its nature as a group V element, we find that As does not occupy substitutional O sites in ZnO but in i...

Descripción completa

Detalles Bibliográficos
Autores principales: Wahl, Ulrich, Correia, Joao Guilherme, Rita, Elisabete, Marques, Ana Claudia, Alves, Eduardo, Carvalho Soares, José
Lenguaje:eng
Publicado: 2007
Materias:
Condensed Matter
Acceso en línea:http://cds.cern.ch/record/1640785

Ejemplares similares

Ejemplares similares