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An In-defect complex as a possible explanation for high luminous efficacy of InGaN and AlInN based devices
The role of indium in GaN and AlN films is investigated with the method of the perturbed angular correlation (PAC). Using the PAC probe $^{111}$In in addition to indium on substitutional cation sites a large fraction of probes is found in a distinctly different microscopic environment which was attr...
| Autores principales: | , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2014
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1007/s10751-010-0200-9 http://cds.cern.ch/record/1641214 |