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Cd doping of AlN via ion implantation studied with perturbed angular correlation
AlN with a wide bandgap of 6.2 eV is a promising candidate for ultraviolet light-emitting diodes and laser diodes. However, the production of the required p-type AlN is still challenging. As a possible dopant Cd was suggested among other Group II atoms (Be, Mg, and Zn). In this study the annealing c...
| Autores principales: | , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2012
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1002/pssc.201100207 http://cds.cern.ch/record/1641253 |