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Cd doping of AlN via ion implantation studied with perturbed angular correlation

AlN with a wide bandgap of 6.2 eV is a promising candidate for ultraviolet light-emitting diodes and laser diodes. However, the production of the required p-type AlN is still challenging. As a possible dopant Cd was suggested among other Group II atoms (Be, Mg, and Zn). In this study the annealing c...

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Detalles Bibliográficos
Autores principales:	Kessler, Patrick, Lorenz, Katharina, Miranda, Sérgio MC, Simon, R, Correia, João Guilherme, Johnston, Karl, Vianden, Reiner
Lenguaje:	eng
Publicado:	2012
Materias:	Condensed Matter
Acceso en línea:	https://dx.doi.org/10.1002/pssc.201100207 http://cds.cern.ch/record/1641253

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