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Lattice location and thermal stability of implanted nickel in silicon studied by on-line emission channeling
We have studied the lattice location of implanted nickel in silicon, for different doping types (n, n$^{+}$ and p$^{+}$). By means of on-line emission channeling, $^{65}$Ni was identified on three different sites of the diamond lattice: ideal substitutional sites, displaced bond-center towards subst...
| Autores principales: | , , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2013
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1063/1.4861142 http://cds.cern.ch/record/1641938 |