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Heavily Irradiated N-in-p Thin Planar Pixel Sensors with and without Active Edges
We present the results of the characterization of silicon pixel modules employing n-in-p planar sensors with an active thickness of 150 $\mathrm{\mu}$m, produced at MPP/HLL, and 100-200 $\mathrm{\mu}$m thin active edge sensor devices, produced at VTT in Finland. These thin sensors are designed as ca...
| Autores principales: | , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2014
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1088/1748-0221/9/05/C05023 http://cds.cern.ch/record/1642679 |