3D Interconnection with TSV

3D interconnection with TSVs (through silicon via) allows the construction of quasi-monolithic multi-tier ASICs, a technology which offers many advantages. In addition to increasing the avail- able area the main advantage is in shortening the length of metal connections within the circuitry reducing...

Descripción completa

Detalles Bibliográficos
Autor principal: Moser, H-G
Formato: info:eu-repo/semantics/article
Lenguaje:eng
Publicado: 2014
Materias:
Detectors and Experimental Techniques
3: Microelectronics and interconnection technology
3.2: 3D Interconnection
Acceso en línea:http://cds.cern.ch/record/1693477

Internet

http://cds.cern.ch/record/1693477

Ejemplares similares