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3D Interconnection with TSV
3D interconnection with TSVs (through silicon via) allows the construction of quasi-monolithic multi-tier ASICs, a technology which offers many advantages. In addition to increasing the avail- able area the main advantage is in shortening the length of metal connections within the circuitry reducing...
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| Formato: | info:eu-repo/semantics/article |
| Lenguaje: | eng |
| Publicado: |
2014
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| Acceso en línea: | http://cds.cern.ch/record/1693477 |