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Combined effect of bulk and surface damage on strip insulation properties of proton irradiated n$^{+}$-p silicon strip sensors

Silicon sensors in next generation hadron colliders willface a tremendously harsh radiation environment. Requirement tostudy rarest reaction channels with statistical constraints hasresulted in a huge increment in radiation flux, resulting in bothsurface damage and bulk damage. For sensors which are...

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Detalles Bibliográficos
Autores principales: Dalal, R, Bhardwaj, A, Ranjan, K, Moll, M, Elliott-Peisert, A
Lenguaje:eng
Publicado: 2014
Materias:
Acceso en línea:https://dx.doi.org/10.1088/1748-0221/9/04/P04007
http://cds.cern.ch/record/1697110