Electrical design of Through Silicon Via

Through Silicon Via (TSV) is a key technology for realizing three-dimensional integrated circuits (3D ICs) for future high-performance and low-power systems with small form factors. This book covers both qualitative and quantitative approaches to give insights of modeling TSV in a various viewpoints...

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Detalles Bibliográficos
Autores principales: Lee, Manho, Pak, Jun, Kim, Joungho
Lenguaje:eng
Publicado: Springer 2014
Materias:
Engineering
Acceso en línea:https://dx.doi.org/10.1007/978-94-017-9038-3
http://cds.cern.ch/record/1707498
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author Lee, Manho
Pak, Jun
Kim, Joungho
author_facet Lee, Manho
Pak, Jun
Kim, Joungho
author_sort Lee, Manho
collection CERN
description Through Silicon Via (TSV) is a key technology for realizing three-dimensional integrated circuits (3D ICs) for future high-performance and low-power systems with small form factors. This book covers both qualitative and quantitative approaches to give insights of modeling TSV in a various viewpoints such as signal integrity, power integrity, and even thermal integrity. Most of the analysis in this book include simulations, numerical modelings and measurements for verification. The author and co-authors in each chapter have been studied deep into a TSV for many years and the accumulated technical know-hows and tips for related subjects are comprehensively covered.
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institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2014
publisher Springer
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spelling cern-17074982021-04-21T20:58:43Zdoi:10.1007/978-94-017-9038-3http://cds.cern.ch/record/1707498engLee, ManhoPak, JunKim, JounghoElectrical design of Through Silicon ViaEngineeringThrough Silicon Via (TSV) is a key technology for realizing three-dimensional integrated circuits (3D ICs) for future high-performance and low-power systems with small form factors. This book covers both qualitative and quantitative approaches to give insights of modeling TSV in a various viewpoints such as signal integrity, power integrity, and even thermal integrity. Most of the analysis in this book include simulations, numerical modelings and measurements for verification. The author and co-authors in each chapter have been studied deep into a TSV for many years and the accumulated technical know-hows and tips for related subjects are comprehensively covered.Springeroai:cds.cern.ch:17074982014
spellingShingle Engineering
Lee, Manho
Pak, Jun
Kim, Joungho
Electrical design of Through Silicon Via
title Electrical design of Through Silicon Via
title_full Electrical design of Through Silicon Via
title_fullStr Electrical design of Through Silicon Via
title_full_unstemmed Electrical design of Through Silicon Via
title_short Electrical design of Through Silicon Via
title_sort electrical design of through silicon via
topic Engineering
url https://dx.doi.org/10.1007/978-94-017-9038-3
http://cds.cern.ch/record/1707498
work_keys_str_mv AT leemanho electricaldesignofthroughsiliconvia
AT pakjun electricaldesignofthroughsiliconvia
AT kimjoungho electricaldesignofthroughsiliconvia

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