Development of novel n+-in-p silicon planar pixel sensors for HL-LHC

We have been developing highly radiation-tolerant n^+-in-p planar pixel sensors for use in the high-luminosity LHC. Novel n^+-in-p structures were made using various combinations of the bias structures (punch-through or polysilicon resistor), isolation structures (p-stop or p-spray), and thicknesses...

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Detalles Bibliográficos
Autores principales: Unno, Y, Gallrapp, C, Hanagaki, K, Hara, K, Hori, R, Idarraga, J, Ikegami, Y, Inuzuka, T, Ishida, A, Ishihara, M, Jinnouchi, O, Kamada, S, Kimura, N, Kishida, T, Lounis, A, Mitsui, S, Nagai, K, Nagai, R, Nakano, I, Takahashi, Y, Takashima, R, Takubo, Y, Terada, S, Tojo, J, Yamamura, K, Yorita, K
Publicado: 2013
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2012.04.061
http://cds.cern.ch/record/1709856

Internet

https://dx.doi.org/10.1016/j.nima.2012.04.061
http://cds.cern.ch/record/1709856

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