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Edge-TCT measurements on irradiated HV CMOS sensors
Passive $100 \times 100 \,\mu$m test diodes in an unirradiated and an irradiated HV2FEI4v3 HV-CMOS silicon sensor were analysed using the edge TCT technique. To integrate the sensor into the setup a PCB was designed to extract the signals, a cooling mechanism was constructed and the system housed in...
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| Lenguaje: | eng |
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2014
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| Acceso en línea: | http://cds.cern.ch/record/1755270 |