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Thin n-in-p planar pixel sensors and active edge sensors for the ATLAS upgrade at HL-LHC
Silicon pixel modules employing n-in-p planar sensors with an active thickness of 200 μm, produced at CiS, and 100-200 μm thin active/slim edge sensor devices, produced at VTT in Finland have been interconnected to ATLAS FE-I3 and FE-I4 read-out chips. The thin sensors are designed for high energy p...
| Autores principales: | , , , |
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| Lenguaje: | eng |
| Publicado: |
2014
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1088/1748-0221/9/12/C12029 http://cds.cern.ch/record/1951619 |