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Performance of capacitively coupled active pixel sensors in 180 nm HV-CMOS technology after irradiation to HL-LHC fluences
In this ATLAS upgrade R&D project, we explore the concept of using a deep-submicron HV-CMOS process to produce a drop-in replacement for traditional radiation-hard silicon sensors. Such active sensors contain simple circuits, e.g. amplifiers and discriminators, but still require a traditional (p...
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| Lenguaje: | eng |
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2014
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| Acceso en línea: | https://dx.doi.org/10.1088/1748-0221/9/03/C03020 http://cds.cern.ch/record/1951847 |