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Performance of capacitively coupled active pixel sensors in 180 nm HV-CMOS technology after irradiation to HL-LHC fluences

In this ATLAS upgrade R&D project, we explore the concept of using a deep-submicron HV-CMOS process to produce a drop-in replacement for traditional radiation-hard silicon sensors. Such active sensors contain simple circuits, e.g. amplifiers and discriminators, but still require a traditional (p...

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Detalles Bibliográficos
Autor principal: Feigl, S.
Lenguaje:eng
Publicado: 2014
Materias:
Acceso en línea:https://dx.doi.org/10.1088/1748-0221/9/03/C03020
http://cds.cern.ch/record/1951847

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