The Effect of Proton Energy on SEU Cross-Section of a 16Mbit TFT PMOS SRAM with DRAM Capacitors

Proton experimental data are analyzed for a 16-Mbit Thin-Film-Transistor (TFT) PMOS Static Random Access Memory (SRAM) with DRAM capacitors. The presence of high-Z materials as tungsten causes an unusual increase of the Single Event Upset (SEU) proton cross-section for the energies above 100MeV. Mon...

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Detalles Bibliográficos
Autores principales: Uznanski, Slawosz, Garcia Alia, Ruben, Blackmore, Ewart, Brugger, Markus, Gaillard, Remi, Mekki, Julien, Todd, Benjamin, Trinczek, Michael, Vilar Villanueva, Andrea
Lenguaje:eng
Publicado: 2015
Materias:
Nuclear Physics - Experiment
Acceso en línea:https://dx.doi.org/10.1109/TNS.2014.2368150
http://cds.cern.ch/record/1979602

Internet

https://dx.doi.org/10.1109/TNS.2014.2368150
http://cds.cern.ch/record/1979602

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