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The Effect of Proton Energy on SEU Cross-Section of a 16Mbit TFT PMOS SRAM with DRAM Capacitors
Proton experimental data are analyzed for a 16-Mbit Thin-Film-Transistor (TFT) PMOS Static Random Access Memory (SRAM) with DRAM capacitors. The presence of high-Z materials as tungsten causes an unusual increase of the Single Event Upset (SEU) proton cross-section for the energies above 100MeV. Mon...
| Autores principales: | , , , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2015
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1109/TNS.2014.2368150 http://cds.cern.ch/record/1979602 |
| _version_ | 1780945205221916672 |
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| author | Uznanski, Slawosz Garcia Alia, Ruben Blackmore, Ewart Brugger, Markus Gaillard, Remi Mekki, Julien Todd, Benjamin Trinczek, Michael Vilar Villanueva, Andrea |
| author_facet | Uznanski, Slawosz Garcia Alia, Ruben Blackmore, Ewart Brugger, Markus Gaillard, Remi Mekki, Julien Todd, Benjamin Trinczek, Michael Vilar Villanueva, Andrea |
| author_sort | Uznanski, Slawosz |
| collection | CERN |
| description | Proton experimental data are analyzed for a 16-Mbit Thin-Film-Transistor (TFT) PMOS Static Random Access Memory (SRAM) with DRAM capacitors. The presence of high-Z materials as tungsten causes an unusual increase of the Single Event Upset (SEU) proton cross-section for the energies above 100MeV. Monte-Carlo simulations reproduce the experimentally measured cross-sections up to 480MeV and predict a further increase up to GeV energies. The implications of this increase are analyzed in the context of the LHC and other radiation environments where a significant fraction of the fluence lies above 100MeV. |
| id | cern-1979602 |
| institution | Organización Europea para la Investigación Nuclear |
| language | eng |
| publishDate | 2015 |
| record_format | invenio |
| spelling | cern-19796022019-09-30T06:29:59Zdoi:10.1109/TNS.2014.2368150http://cds.cern.ch/record/1979602engUznanski, SlawoszGarcia Alia, RubenBlackmore, EwartBrugger, MarkusGaillard, RemiMekki, JulienTodd, BenjaminTrinczek, MichaelVilar Villanueva, AndreaThe Effect of Proton Energy on SEU Cross-Section of a 16Mbit TFT PMOS SRAM with DRAM CapacitorsNuclear Physics - ExperimentProton experimental data are analyzed for a 16-Mbit Thin-Film-Transistor (TFT) PMOS Static Random Access Memory (SRAM) with DRAM capacitors. The presence of high-Z materials as tungsten causes an unusual increase of the Single Event Upset (SEU) proton cross-section for the energies above 100MeV. Monte-Carlo simulations reproduce the experimentally measured cross-sections up to 480MeV and predict a further increase up to GeV energies. The implications of this increase are analyzed in the context of the LHC and other radiation environments where a significant fraction of the fluence lies above 100MeV.CERN-ACC-2015-0002oai:cds.cern.ch:19796022015-01-05 |
| spellingShingle | Nuclear Physics - Experiment Uznanski, Slawosz Garcia Alia, Ruben Blackmore, Ewart Brugger, Markus Gaillard, Remi Mekki, Julien Todd, Benjamin Trinczek, Michael Vilar Villanueva, Andrea The Effect of Proton Energy on SEU Cross-Section of a 16Mbit TFT PMOS SRAM with DRAM Capacitors |
| title | The Effect of Proton Energy on SEU Cross-Section of a 16Mbit TFT PMOS SRAM with DRAM Capacitors |
| title_full | The Effect of Proton Energy on SEU Cross-Section of a 16Mbit TFT PMOS SRAM with DRAM Capacitors |
| title_fullStr | The Effect of Proton Energy on SEU Cross-Section of a 16Mbit TFT PMOS SRAM with DRAM Capacitors |
| title_full_unstemmed | The Effect of Proton Energy on SEU Cross-Section of a 16Mbit TFT PMOS SRAM with DRAM Capacitors |
| title_short | The Effect of Proton Energy on SEU Cross-Section of a 16Mbit TFT PMOS SRAM with DRAM Capacitors |
| title_sort | effect of proton energy on seu cross-section of a 16mbit tft pmos sram with dram capacitors |
| topic | Nuclear Physics - Experiment |
| url | https://dx.doi.org/10.1109/TNS.2014.2368150 http://cds.cern.ch/record/1979602 |
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