CMOS MAPS in a Homogeneous 3D Process for Charged Particle Tracking

This work presents the characterization of deep n-well (DNW) CMOS monolithic active pixel sensors (MAPS) fabricated in a 130 nm homogeneous, vertically integrated technology. An evaluation of the 3D MAPS device performance, designed for application of the experiments at the future high luminosity co...

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Detalles Bibliográficos
Autores principales: Manazza, A, Gaioni, L, Manghisoni, M, Re, V, Traversi, G, Bettarini, S, Forti, F, Morsani, F, Rizzo, G
Formato: info:eu-repo/semantics/article
Lenguaje:eng
Publicado: IEEE Trans. Nucl. Sci. 2014
Materias:
Detectors and Experimental Techniques
3: Microelectronics and interconnection technology
3.2: 3D Interconnection
Acceso en línea:http://cds.cern.ch/record/1993071

Internet

http://cds.cern.ch/record/1993071

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