CMOS MAPS in a Homogeneous 3D Process for Charged Particle Tracking

This work presents the characterization of deep n-well (DNW) CMOS monolithic active pixel sensors (MAPS) fabricated in a 130 nm homogeneous, vertically integrated technology. An evaluation of the 3D MAPS device performance, designed for application of the experiments at the future high luminosity co...

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Detalles Bibliográficos
Autores principales: Manazza, A, Gaioni, L, Manghisoni, M, Re, V, Traversi, G, Bettarini, S, Forti, F, Morsani, F, Rizzo, G
Formato: info:eu-repo/semantics/article
Lenguaje:eng
Publicado: IEEE Trans. Nucl. Sci. 2014
Materias:
Detectors and Experimental Techniques
3: Microelectronics and interconnection technology
3.2: 3D Interconnection
Acceso en línea:http://cds.cern.ch/record/1993071
Descripción
Sumario:This work presents the characterization of deep n-well (DNW) CMOS monolithic active pixel sensors (MAPS) fabricated in a 130 nm homogeneous, vertically integrated technology. An evaluation of the 3D MAPS device performance, designed for application of the experiments at the future high luminosity colliders, is provided through the characterization of the prototypes, including tests with infrared (IR) laser, 55Fe and 90Sr sources. The radiation hardness study of the technology will also be presented together with its impact on 3D DNW MAPS performance.

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