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CMOS MAPS in a Homogeneous 3D Process for Charged Particle Tracking

This work presents the characterization of deep n-well (DNW) CMOS monolithic active pixel sensors (MAPS) fabricated in a 130 nm homogeneous, vertically integrated technology. An evaluation of the 3D MAPS device performance, designed for application of the experiments at the future high luminosity co...

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Detalles Bibliográficos
Autores principales: Manazza, A, Gaioni, L, Manghisoni, M, Re, V, Traversi, G, Bettarini, S, Forti, F, Morsani, F, Rizzo, G
Formato: info:eu-repo/semantics/article
Lenguaje:eng
Publicado: IEEE Trans. Nucl. Sci. 2014
Materias:
Acceso en línea:http://cds.cern.ch/record/1993071
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author Manazza, A
Gaioni, L
Manghisoni, M
Re, V
Traversi, G
Bettarini, S
Forti, F
Morsani, F
Rizzo, G
author_facet Manazza, A
Gaioni, L
Manghisoni, M
Re, V
Traversi, G
Bettarini, S
Forti, F
Morsani, F
Rizzo, G
author_sort Manazza, A
collection CERN
description This work presents the characterization of deep n-well (DNW) CMOS monolithic active pixel sensors (MAPS) fabricated in a 130 nm homogeneous, vertically integrated technology. An evaluation of the 3D MAPS device performance, designed for application of the experiments at the future high luminosity colliders, is provided through the characterization of the prototypes, including tests with infrared (IR) laser, 55Fe and 90Sr sources. The radiation hardness study of the technology will also be presented together with its impact on 3D DNW MAPS performance.
format info:eu-repo/semantics/article
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institution Organización Europea para la Investigación Nuclear
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publishDate 2014
publisher IEEE Trans. Nucl. Sci.
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spelling cern-19930712019-09-30T06:29:59Z http://cds.cern.ch/record/1993071 eng Manazza, A Gaioni, L Manghisoni, M Re, V Traversi, G Bettarini, S Forti, F Morsani, F Rizzo, G CMOS MAPS in a Homogeneous 3D Process for Charged Particle Tracking Detectors and Experimental Techniques 3: Microelectronics and interconnection technology 3.2: 3D Interconnection This work presents the characterization of deep n-well (DNW) CMOS monolithic active pixel sensors (MAPS) fabricated in a 130 nm homogeneous, vertically integrated technology. An evaluation of the 3D MAPS device performance, designed for application of the experiments at the future high luminosity colliders, is provided through the characterization of the prototypes, including tests with infrared (IR) laser, 55Fe and 90Sr sources. The radiation hardness study of the technology will also be presented together with its impact on 3D DNW MAPS performance. info:eu-repo/grantAgreement/EC/FP7/262025 info:eu-repo/semantics/openAccess Education Level info:eu-repo/semantics/article http://cds.cern.ch/record/1993071 IEEE Trans. Nucl. Sci. info:doi/10.1109/TNS.2014.2299341 IEEE Trans. Nucl. Sci., 1 (2014) pp. 700-707 2014
spellingShingle Detectors and Experimental Techniques
3: Microelectronics and interconnection technology
3.2: 3D Interconnection
Manazza, A
Gaioni, L
Manghisoni, M
Re, V
Traversi, G
Bettarini, S
Forti, F
Morsani, F
Rizzo, G
CMOS MAPS in a Homogeneous 3D Process for Charged Particle Tracking
title CMOS MAPS in a Homogeneous 3D Process for Charged Particle Tracking
title_full CMOS MAPS in a Homogeneous 3D Process for Charged Particle Tracking
title_fullStr CMOS MAPS in a Homogeneous 3D Process for Charged Particle Tracking
title_full_unstemmed CMOS MAPS in a Homogeneous 3D Process for Charged Particle Tracking
title_short CMOS MAPS in a Homogeneous 3D Process for Charged Particle Tracking
title_sort cmos maps in a homogeneous 3d process for charged particle tracking
topic Detectors and Experimental Techniques
3: Microelectronics and interconnection technology
3.2: 3D Interconnection
url http://cds.cern.ch/record/1993071
http://cds.cern.ch/record/1993071
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