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CMOS MAPS in a Homogeneous 3D Process for Charged Particle Tracking
This work presents the characterization of deep n-well (DNW) CMOS monolithic active pixel sensors (MAPS) fabricated in a 130 nm homogeneous, vertically integrated technology. An evaluation of the 3D MAPS device performance, designed for application of the experiments at the future high luminosity co...
Autores principales: | , , , , , , , , |
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Formato: | info:eu-repo/semantics/article |
Lenguaje: | eng |
Publicado: |
IEEE Trans. Nucl. Sci.
2014
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Materias: | |
Acceso en línea: | http://cds.cern.ch/record/1993071 |
_version_ | 1780945821659824128 |
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author | Manazza, A Gaioni, L Manghisoni, M Re, V Traversi, G Bettarini, S Forti, F Morsani, F Rizzo, G |
author_facet | Manazza, A Gaioni, L Manghisoni, M Re, V Traversi, G Bettarini, S Forti, F Morsani, F Rizzo, G |
author_sort | Manazza, A |
collection | CERN |
description | This work presents the characterization of deep n-well (DNW) CMOS monolithic active pixel sensors (MAPS) fabricated in a 130 nm homogeneous, vertically integrated technology. An evaluation of the 3D MAPS device performance, designed for application of the experiments at the future high luminosity colliders, is provided through the characterization of the prototypes, including tests with infrared (IR) laser, 55Fe and 90Sr sources. The radiation hardness study of the technology will also be presented together with its impact on 3D DNW MAPS performance. |
format | info:eu-repo/semantics/article |
id | cern-1993071 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 2014 |
publisher | IEEE Trans. Nucl. Sci. |
record_format | invenio |
spelling | cern-19930712019-09-30T06:29:59Z http://cds.cern.ch/record/1993071 eng Manazza, A Gaioni, L Manghisoni, M Re, V Traversi, G Bettarini, S Forti, F Morsani, F Rizzo, G CMOS MAPS in a Homogeneous 3D Process for Charged Particle Tracking Detectors and Experimental Techniques 3: Microelectronics and interconnection technology 3.2: 3D Interconnection This work presents the characterization of deep n-well (DNW) CMOS monolithic active pixel sensors (MAPS) fabricated in a 130 nm homogeneous, vertically integrated technology. An evaluation of the 3D MAPS device performance, designed for application of the experiments at the future high luminosity colliders, is provided through the characterization of the prototypes, including tests with infrared (IR) laser, 55Fe and 90Sr sources. The radiation hardness study of the technology will also be presented together with its impact on 3D DNW MAPS performance. info:eu-repo/grantAgreement/EC/FP7/262025 info:eu-repo/semantics/openAccess Education Level info:eu-repo/semantics/article http://cds.cern.ch/record/1993071 IEEE Trans. Nucl. Sci. info:doi/10.1109/TNS.2014.2299341 IEEE Trans. Nucl. Sci., 1 (2014) pp. 700-707 2014 |
spellingShingle | Detectors and Experimental Techniques 3: Microelectronics and interconnection technology 3.2: 3D Interconnection Manazza, A Gaioni, L Manghisoni, M Re, V Traversi, G Bettarini, S Forti, F Morsani, F Rizzo, G CMOS MAPS in a Homogeneous 3D Process for Charged Particle Tracking |
title | CMOS MAPS in a Homogeneous 3D Process for Charged Particle Tracking |
title_full | CMOS MAPS in a Homogeneous 3D Process for Charged Particle Tracking |
title_fullStr | CMOS MAPS in a Homogeneous 3D Process for Charged Particle Tracking |
title_full_unstemmed | CMOS MAPS in a Homogeneous 3D Process for Charged Particle Tracking |
title_short | CMOS MAPS in a Homogeneous 3D Process for Charged Particle Tracking |
title_sort | cmos maps in a homogeneous 3d process for charged particle tracking |
topic | Detectors and Experimental Techniques 3: Microelectronics and interconnection technology 3.2: 3D Interconnection |
url | http://cds.cern.ch/record/1993071 http://cds.cern.ch/record/1993071 |
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