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Lattice location of transition metals in silicon by means of emission channeling
The behavior of transition metals (TMs) in silicon is a subject that has been studied extensively during the last six decades. Their unintentional introduction during the Si production, crystal growth and device manufacturing have made them difficult contaminants to avoid. Once in silicon they easil...
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| Lenguaje: | eng |
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2015
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| Acceso en línea: | http://cds.cern.ch/record/1993095 |