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A 10MS/s 8-bit charge-redistribution ADC for hybrid pixel applications in 65m CMOS

The design and measurement results of an 8-bit SAR ADC, based on a charge-redistribution DAC, are presented. This ADC is characterized by superior power efficiency and small area, realized by employing a lateral metal–metal capacitor array and a dynamic two-stage comparator. To avoid the need for a...

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Autores principales: Kishishita, T, Hemperek, T, Krüger, H, Koch, M, Germic, L, Wermes, N
Formato: info:eu-repo/semantics/article
Lenguaje:eng
Publicado: Nucl. Instrum. Methods Phys. Res., A 2013
Materias:
Acceso en línea:http://cds.cern.ch/record/1997610
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author Kishishita, T
Hemperek, T
Krüger, H
Koch, M
Germic, L
Wermes, N
author_facet Kishishita, T
Hemperek, T
Krüger, H
Koch, M
Germic, L
Wermes, N
author_sort Kishishita, T
collection CERN
description The design and measurement results of an 8-bit SAR ADC, based on a charge-redistribution DAC, are presented. This ADC is characterized by superior power efficiency and small area, realized by employing a lateral metal–metal capacitor array and a dynamic two-stage comparator. To avoid the need for a highspeed clock and its associated power consumption, an asynchronous logic was implemented in a logic control cell. A test chip has been developed in a 65 nm CMOS technology, including eight ADC channels with different layout flavors of the capacitor array, a transimpedance amplifier as a signal input structure, a serializer, and a custom-made LVDS driver for data transmission. The integral (INL) and differential (DNL) nonlinearities are measured below 0.5 LSB and 0.8 LSB, respectively, for the best channel operating at a sampling frequency of 10 MS/s. The area occupies 40 μm 70 μm for one ADC channel. The power consumption is estimated as 4 μW at 1 MS/s and 38 μW at 10 MS/s with a supply rail of 1.2 V. These excellent performance features and the natural radiation hardness of the design, due to the thin gate oxide thickness of transistors, are very interesting for front-end electronics ICs of future hybrid-pixel detector systems.
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spelling cern-19976102019-09-30T06:29:59Z http://cds.cern.ch/record/1997610 eng Kishishita, T Hemperek, T Krüger, H Koch, M Germic, L Wermes, N A 10MS/s 8-bit charge-redistribution ADC for hybrid pixel applications in 65m CMOS Detectors and Experimental Techniques 3: Microelectronics and interconnection technology 3.3: Shareable IP Blocks for HEP The design and measurement results of an 8-bit SAR ADC, based on a charge-redistribution DAC, are presented. This ADC is characterized by superior power efficiency and small area, realized by employing a lateral metal–metal capacitor array and a dynamic two-stage comparator. To avoid the need for a highspeed clock and its associated power consumption, an asynchronous logic was implemented in a logic control cell. A test chip has been developed in a 65 nm CMOS technology, including eight ADC channels with different layout flavors of the capacitor array, a transimpedance amplifier as a signal input structure, a serializer, and a custom-made LVDS driver for data transmission. The integral (INL) and differential (DNL) nonlinearities are measured below 0.5 LSB and 0.8 LSB, respectively, for the best channel operating at a sampling frequency of 10 MS/s. The area occupies 40 μm 70 μm for one ADC channel. The power consumption is estimated as 4 μW at 1 MS/s and 38 μW at 10 MS/s with a supply rail of 1.2 V. These excellent performance features and the natural radiation hardness of the design, due to the thin gate oxide thickness of transistors, are very interesting for front-end electronics ICs of future hybrid-pixel detector systems. info:eu-repo/grantAgreement/EC/FP7/262025 info:eu-repo/semantics/openAccess Education Level info:eu-repo/semantics/article http://cds.cern.ch/record/1997610 Nucl. Instrum. Methods Phys. Res., A Nucl. Instrum. Methods Phys. Res., A, (2013) pp. 506-510 2013
spellingShingle Detectors and Experimental Techniques
3: Microelectronics and interconnection technology
3.3: Shareable IP Blocks for HEP
Kishishita, T
Hemperek, T
Krüger, H
Koch, M
Germic, L
Wermes, N
A 10MS/s 8-bit charge-redistribution ADC for hybrid pixel applications in 65m CMOS
title A 10MS/s 8-bit charge-redistribution ADC for hybrid pixel applications in 65m CMOS
title_full A 10MS/s 8-bit charge-redistribution ADC for hybrid pixel applications in 65m CMOS
title_fullStr A 10MS/s 8-bit charge-redistribution ADC for hybrid pixel applications in 65m CMOS
title_full_unstemmed A 10MS/s 8-bit charge-redistribution ADC for hybrid pixel applications in 65m CMOS
title_short A 10MS/s 8-bit charge-redistribution ADC for hybrid pixel applications in 65m CMOS
title_sort 10ms/s 8-bit charge-redistribution adc for hybrid pixel applications in 65m cmos
topic Detectors and Experimental Techniques
3: Microelectronics and interconnection technology
3.3: Shareable IP Blocks for HEP
url http://cds.cern.ch/record/1997610
http://cds.cern.ch/record/1997610
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