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Characterisation of n-in-p pixel sensors for high radiation environments
This work presents the first held at Liverpool University measurements of pixel sensors with n-type readout implant in the p-type bulk before and after irradiation of samples by 24 GeV protons to doses 7 10^15 and 1.5 10^16 protons/cm^2 . A comparison is given for two measurement techniques; one bas...
| Autores principales: | , , , , , , |
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| Formato: | info:eu-repo/semantics/article |
| Lenguaje: | eng |
| Publicado: |
Nucl. Instrum. Methods Phys. Res., A
2011
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| Materias: | |
| Acceso en línea: | http://cds.cern.ch/record/2002059 |