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Lifetime spectroscopy: a method of defect characterization in silicon for photovoltaic applications

Lifetime spectroscopy is one of the most sensitive diagnostic tools for the identification and analysis of impurities in semiconductors. Since it is based on the recombination process, it provides insight into precisely those defects that are relevant to semiconductor devices such as solar cells. Th...

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Detalles Bibliográficos
Autor principal: Rein, Stefan
Lenguaje:eng
Publicado: Springer 2005
Materias:
Acceso en línea:https://dx.doi.org/10.1007/3-540-27922-9
http://cds.cern.ch/record/2023354
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author Rein, Stefan
author_facet Rein, Stefan
author_sort Rein, Stefan
collection CERN
description Lifetime spectroscopy is one of the most sensitive diagnostic tools for the identification and analysis of impurities in semiconductors. Since it is based on the recombination process, it provides insight into precisely those defects that are relevant to semiconductor devices such as solar cells. This book introduces a transparent modeling procedure that allows a detailed theoretical evaluation of the spectroscopic potential of the different lifetime spectroscopic techniques. The various theoretical predictions are verified experimentally with the context of a comprehensive study on different metal impurities. The quality and consistency of the spectroscopic results, as explained here, confirms the excellent performance of lifetime spectroscopy.
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institution Organización Europea para la Investigación Nuclear
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spelling cern-20233542021-04-21T20:13:46Zdoi:10.1007/3-540-27922-9http://cds.cern.ch/record/2023354engRein, StefanLifetime spectroscopy: a method of defect characterization in silicon for photovoltaic applicationsOther Fields of PhysicsLifetime spectroscopy is one of the most sensitive diagnostic tools for the identification and analysis of impurities in semiconductors. Since it is based on the recombination process, it provides insight into precisely those defects that are relevant to semiconductor devices such as solar cells. This book introduces a transparent modeling procedure that allows a detailed theoretical evaluation of the spectroscopic potential of the different lifetime spectroscopic techniques. The various theoretical predictions are verified experimentally with the context of a comprehensive study on different metal impurities. The quality and consistency of the spectroscopic results, as explained here, confirms the excellent performance of lifetime spectroscopy.Springeroai:cds.cern.ch:20233542005
spellingShingle Other Fields of Physics
Rein, Stefan
Lifetime spectroscopy: a method of defect characterization in silicon for photovoltaic applications
title Lifetime spectroscopy: a method of defect characterization in silicon for photovoltaic applications
title_full Lifetime spectroscopy: a method of defect characterization in silicon for photovoltaic applications
title_fullStr Lifetime spectroscopy: a method of defect characterization in silicon for photovoltaic applications
title_full_unstemmed Lifetime spectroscopy: a method of defect characterization in silicon for photovoltaic applications
title_short Lifetime spectroscopy: a method of defect characterization in silicon for photovoltaic applications
title_sort lifetime spectroscopy: a method of defect characterization in silicon for photovoltaic applications
topic Other Fields of Physics
url https://dx.doi.org/10.1007/3-540-27922-9
http://cds.cern.ch/record/2023354
work_keys_str_mv AT reinstefan lifetimespectroscopyamethodofdefectcharacterizationinsiliconforphotovoltaicapplications