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Trapping in irradiated p-on-n silicon sensors at fluences anticipated at the HL-LHC outer tracker
The degradation of signal in silicon sensors is studied under conditions expected at the CERN High-Luminosity LHC. 200~$\mu$m thick n-type silicon sensors are irradiated with protons of different energies to fluences of up to $3 \cdot 10^{15}$~neq/cm$^2$. Pulsed red laser light with a wavelength of...
| Autores principales: | , , , , |
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| Lenguaje: | eng |
| Publicado: |
2014
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| Materias: | |
| Acceso en línea: | http://cds.cern.ch/record/2026854 |