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Trapping in irradiated p-on-n silicon sensors at fluences anticipated at the HL-LHC outer tracker
The degradation of signal in silicon sensors is studied under conditions expected at the CERN High-Luminosity LHC. 200~$\mu$m thick n-type silicon sensors are irradiated with protons of different energies to fluences of up to $3 \cdot 10^{15}$~neq/cm$^2$. Pulsed red laser light with a wavelength of...
Autores principales: | , , , , |
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Lenguaje: | eng |
Publicado: |
2014
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Materias: | |
Acceso en línea: | http://cds.cern.ch/record/2026854 |
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author | Pohlsen, Thomas Eckhart Fretwurst Garutti, Erika Junkes, Alexandra Steinbrueck, Georg |
author_facet | Pohlsen, Thomas Eckhart Fretwurst Garutti, Erika Junkes, Alexandra Steinbrueck, Georg |
author_sort | Pohlsen, Thomas |
collection | CERN |
description | The degradation of signal in silicon sensors is studied under conditions expected at the CERN High-Luminosity LHC.
200~$\mu$m thick n-type silicon sensors are irradiated with protons of different energies to fluences of up to $3 \cdot 10^{15}$~neq/cm$^2$. Pulsed red laser light with a wavelength of 672~nm is used to generate electron-hole pairs in the sensors. The induced signals are used to determine the charge collection efficiencies separately for electrons and holes drifting through the sensor. The effective trapping rates are extracted by comparing the results to simulation.
The electric field is simulated using Synopsys device simulation assuming two effective defects.
The generation and drift of charge carriers are simulated in an independent simulation based on PixelAV.
The effective trapping rates are determined from the measured charge collection efficiencies and the simulated and measured time-resolved current pulses are compared.
The effective trapping rates determined for both electrons and holes are about 50\% smaller than those obtained using standard extrapolations of studies at low fluences and suggests an improved tracker performance over initial expectations. |
id | cern-2026854 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 2014 |
record_format | invenio |
spelling | cern-20268542019-09-30T06:29:59Zhttp://cds.cern.ch/record/2026854engPohlsen, ThomasEckhart FretwurstGarutti, ErikaJunkes, AlexandraSteinbrueck, GeorgTrapping in irradiated p-on-n silicon sensors at fluences anticipated at the HL-LHC outer trackerDetectors and Experimental TechniquesThe degradation of signal in silicon sensors is studied under conditions expected at the CERN High-Luminosity LHC. 200~$\mu$m thick n-type silicon sensors are irradiated with protons of different energies to fluences of up to $3 \cdot 10^{15}$~neq/cm$^2$. Pulsed red laser light with a wavelength of 672~nm is used to generate electron-hole pairs in the sensors. The induced signals are used to determine the charge collection efficiencies separately for electrons and holes drifting through the sensor. The effective trapping rates are extracted by comparing the results to simulation. The electric field is simulated using Synopsys device simulation assuming two effective defects. The generation and drift of charge carriers are simulated in an independent simulation based on PixelAV. The effective trapping rates are determined from the measured charge collection efficiencies and the simulated and measured time-resolved current pulses are compared. The effective trapping rates determined for both electrons and holes are about 50\% smaller than those obtained using standard extrapolations of studies at low fluences and suggests an improved tracker performance over initial expectations.CMS-NOTE-2015-002CERN-CMS-NOTE-2015-002oai:cds.cern.ch:20268542014-06-06 |
spellingShingle | Detectors and Experimental Techniques Pohlsen, Thomas Eckhart Fretwurst Garutti, Erika Junkes, Alexandra Steinbrueck, Georg Trapping in irradiated p-on-n silicon sensors at fluences anticipated at the HL-LHC outer tracker |
title | Trapping in irradiated p-on-n silicon sensors at fluences anticipated at the HL-LHC outer tracker |
title_full | Trapping in irradiated p-on-n silicon sensors at fluences anticipated at the HL-LHC outer tracker |
title_fullStr | Trapping in irradiated p-on-n silicon sensors at fluences anticipated at the HL-LHC outer tracker |
title_full_unstemmed | Trapping in irradiated p-on-n silicon sensors at fluences anticipated at the HL-LHC outer tracker |
title_short | Trapping in irradiated p-on-n silicon sensors at fluences anticipated at the HL-LHC outer tracker |
title_sort | trapping in irradiated p-on-n silicon sensors at fluences anticipated at the hl-lhc outer tracker |
topic | Detectors and Experimental Techniques |
url | http://cds.cern.ch/record/2026854 |
work_keys_str_mv | AT pohlsenthomas trappinginirradiatedponnsiliconsensorsatfluencesanticipatedatthehllhcoutertracker AT eckhartfretwurst trappinginirradiatedponnsiliconsensorsatfluencesanticipatedatthehllhcoutertracker AT garuttierika trappinginirradiatedponnsiliconsensorsatfluencesanticipatedatthehllhcoutertracker AT junkesalexandra trappinginirradiatedponnsiliconsensorsatfluencesanticipatedatthehllhcoutertracker AT steinbrueckgeorg trappinginirradiatedponnsiliconsensorsatfluencesanticipatedatthehllhcoutertracker |