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Development of a TSC-Setup for the Characterization of Electron and Hole Traps in Irradiated Silicon Sensors
For the characterization of radiation damage in silicon detectors a low-noise TSC-Setup was built to analyze charge trapping in the temperature range between 15 K and 250 K. The setup offers the possibility to perform Thermally Stimulated Current (TSC) and IV measurements and also to anneal samples...
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| Lenguaje: | eng |
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2015
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| Acceso en línea: | http://cds.cern.ch/record/2055231 |