Development of a TSC-Setup for the Characterization of Electron and Hole Traps in Irradiated Silicon Sensors

For the characterization of radiation damage in silicon detectors a low-noise TSC-Setup was built to analyze charge trapping in the temperature range between 15 K and 250 K. The setup offers the possibility to perform Thermally Stimulated Current (TSC) and IV measurements and also to anneal samples...

Descripción completa

Detalles Bibliográficos
Autor principal: Stricker, Miriam
Lenguaje:eng
Publicado: 2015
Materias:
Detectors and Experimental Techniques
Acceso en línea:http://cds.cern.ch/record/2055231
_version_ 1780948279684497408
author Stricker, Miriam
author_facet Stricker, Miriam
author_sort Stricker, Miriam
collection CERN
description For the characterization of radiation damage in silicon detectors a low-noise TSC-Setup was built to analyze charge trapping in the temperature range between 15 K and 250 K. The setup offers the possibility to perform Thermally Stimulated Current (TSC) and IV measurements and also to anneal samples at temperatures up to 180 ◦C. A first annealing study on a proton irradiated silicon pad sensor was performed. This study focuses mainly on the variation of the trap concentration and the results are compared to literature.
id cern-2055231
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2015
record_format invenio
spelling cern-20552312019-09-30T06:29:59Zhttp://cds.cern.ch/record/2055231engStricker, MiriamDevelopment of a TSC-Setup for the Characterization of Electron and Hole Traps in Irradiated Silicon SensorsDetectors and Experimental TechniquesFor the characterization of radiation damage in silicon detectors a low-noise TSC-Setup was built to analyze charge trapping in the temperature range between 15 K and 250 K. The setup offers the possibility to perform Thermally Stimulated Current (TSC) and IV measurements and also to anneal samples at temperatures up to 180 ◦C. A first annealing study on a proton irradiated silicon pad sensor was performed. This study focuses mainly on the variation of the trap concentration and the results are compared to literature.CERN-STUDENTS-Note-2015-230oai:cds.cern.ch:20552312015-09-25
spellingShingle Detectors and Experimental Techniques
Stricker, Miriam
Development of a TSC-Setup for the Characterization of Electron and Hole Traps in Irradiated Silicon Sensors
title Development of a TSC-Setup for the Characterization of Electron and Hole Traps in Irradiated Silicon Sensors
title_full Development of a TSC-Setup for the Characterization of Electron and Hole Traps in Irradiated Silicon Sensors
title_fullStr Development of a TSC-Setup for the Characterization of Electron and Hole Traps in Irradiated Silicon Sensors
title_full_unstemmed Development of a TSC-Setup for the Characterization of Electron and Hole Traps in Irradiated Silicon Sensors
title_short Development of a TSC-Setup for the Characterization of Electron and Hole Traps in Irradiated Silicon Sensors
title_sort development of a tsc-setup for the characterization of electron and hole traps in irradiated silicon sensors
topic Detectors and Experimental Techniques
url http://cds.cern.ch/record/2055231
work_keys_str_mv AT strickermiriam developmentofatscsetupforthecharacterizationofelectronandholetrapsinirradiatedsiliconsensors

Ejemplares similares