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Development of a TSC-Setup for the Characterization of Electron and Hole Traps in Irradiated Silicon Sensors

For the characterization of radiation damage in silicon detectors a low-noise TSC-Setup was built to analyze charge trapping in the temperature range between 15 K and 250 K. The setup offers the possibility to perform Thermally Stimulated Current (TSC) and IV measurements and also to anneal samples...

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Detalles Bibliográficos
Autor principal:	Stricker, Miriam
Lenguaje:	eng
Publicado:	2015
Materias:	Detectors and Experimental Techniques
Acceso en línea:	http://cds.cern.ch/record/2055231

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